Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditionsJIANG, L. J; WANG, X. L; XIAO, H. L et al.Applied physics. A, Materials science & processing (Print). 2011, Vol 104, Num 1, pp 429-432, issn 0947-8396, 4 p.Article

Hydrogen sensors based on AlGaN/AlN/GaN HEMTWANG, X. H; WANG, X. L; FENG, C et al.Microelectronics journal. 2008, Vol 39, Num 1, pp 20-23, issn 0959-8324, 4 p.Article

1-mm gate periphery AlGaN/AlN/GaN HEMTs on sic with output power of 9.39 W at 8 GHzWANG, X. L; CHENG, T. S; MA, Z. Y et al.Solid-state electronics. 2007, Vol 51, Num 3, pp 428-432, issn 0038-1101, 5 p.Article

Recovery of topsoil physicochemical properties in revegetated sites in the sand-burial ecosystems of the Tengger Desert, northern ChinaLI, X. R; HE, M. Z; DUAN, Z. H et al.Geomorphology (Amsterdam). 2007, Vol 88, Num 3-4, pp 254-265, issn 0169-555X, 12 p.Article

Relationships between carbon isotope discrimination and yield of spring wheat under different water and nitrogen levelsZHAO, L. J; XIAO, H. L; LIU, X. H et al.Journal of plant nutrition. 2007, Vol 30, Num 4-6, pp 947-963, issn 0190-4167, 17 p.Article

The growth of high-Al-content InAlGaN quaternary alloys by RF-MBEWANG, B. Z; WANG, X. L; WANG, X. Y et al.Journal of physics. D, Applied physics (Print). 2007, Vol 40, Num 3, pp 765-768, issn 0022-3727, 4 p.Article

Landscape change and sandy desertification in arid areas : a case study in the Zhangye Region of Gansu Province, ChinaLUO, F; QI, S. Z; XIAO, H. L et al.Environmental geology (Berlin). 2005, Vol 49, Num 1, pp 90-97, issn 0943-0105, 8 p.Article

Dry/wet variation recorded by shrub tree-rings in the central Badain Jaran Desert of northwestern ChinaXIAO, S. C; XIAO, H. L; DONG, Z. B et al.Journal of arid environments. 2012, Vol 87, pp 85-94, issn 0140-1963, 10 p.Article

Analysis of water consumption using a regional input―output model: Model development and application to Zhangye City, Northwestern ChinaWANG, Y; XIAO, H. L; LU, M. F et al.Journal of arid environments. 2009, Vol 73, Num 10, pp 894-900, issn 0140-1963, 7 p.Article

The effect of the Al_xGa_1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH₃-MBEZHANG, N. H; WANG, X. L; ZENG, Y. P et al.Journal of crystal growth. 2005, Vol 280, Num 3-4, pp 346-351, issn 0022-0248, 6 p.Article

The development of ferrography in China : some personal reflectionsXIAO, H. L.Tribology international. 2005, Vol 38, Num 10, pp 904-907, issn 0301-679X, 4 p.Article

Design and full scale test of the fuel handling systemLIU, J. G; XIAO, H. L; LI, C. P et al.Nuclear engineering and design. 2002, Vol 218, Num 1-3, pp 169-178, issn 0029-5493Article

Evapotranspiration and crop coefficient of Populus euphratica Oliv forest during the growing season in the extreme arid region northwest ChinaHOU, L. G; XIAO, H. L; SI, J. H et al.Agricultural water management (Print). 2010, Vol 97, Num 2, pp 351-356, issn 0378-3774, 6 p.Article

An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band applicationWANG, X. L; CHEN, T. S; LI, J. M et al.Solid-state electronics. 2009, Vol 53, Num 3, pp 332-335, issn 0038-1101, 4 p.Article

High-performance 2 mm gate width GaN HEMTs on 6H-SiC with output power of 22.4 W@8 GHzWANG, X. L; CHEN, T. S; XIAO, H. L et al.Solid-state electronics. 2008, Vol 52, Num 6, pp 926-929, issn 0038-1101, 4 p.Article

Growth and properties of GaN on Si (111) substrates with algan/ain buffer layer by NH₃-GSMBEZHANG, N. H; WANG, X. L; ZENG, Y. P et al.Journal of physics. D, Applied physics (Print). 2005, Vol 38, Num 12, pp 1888-1891, issn 0022-3727, 4 p.Article

A study of information technology used in oil monitoringYAN, X. P; ZHAO, C. H; LU, Z. Y et al.Tribology international. 2005, Vol 38, Num 10, pp 879-886, issn 0301-679X, 8 p.Article